SI4974DY-T1-E3 Vishay, SI4974DY-T1-E3 Datasheet - Page 7

• Manufacturer Part Number: SI4974DY-T1-E3
• Description: MOSFET DUAL N-CH 30V 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI4974DY-T1-E3

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A, 4.4A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 11nC @ 4.5V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 16mohm
• Rds(on) Test Voltage Vgs: 20V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4974DY-T1-E3TR

CHANNEL-2 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73052
S09-0228-Rev. D, 09-Feb-09
- 0.2
- 0.4
- 0.6
- 0.8
- 1.0
0.4
0.2
0.0
40
10
1
0.0
- 50
- 25
Source-Drain Diode Forward Voltage
0.3
V
SD
0
T
- Source-to-Drain Voltage (V)
Threshold Voltage
T
J
J
= 150 °C
- Temperature (°C)
25
0.6
50
I
D
0.9
= 250 µA
75
0.01
100
T
0.1
10
J
1
100
0.1
= 25 °C
1.2
* V
Safe Operating Area, Junction-to-Case
125
GS
by R
> minimum V
Limited
V
DS(on) *
DS
1.5
150
Single Pulse
- Drain-to-Source Voltage (V)
T
C
1
= 25 °C
GS
at which R
10
DS(on)
0.10
0.08
0.06
0.04
0.02
0.00
50
40
30
20
10
0
0.001
is specified
0
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
10 ms
1 ms
100 ms
1 s
10 s
DC
2
100
V
0.01
GS
- Gate-to-Source Voltage (V)
4
Time (s)
I
D
0.1
= 6 A
Vishay Siliconix
6
Si4974DY
www.vishay.com
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