FDS6984S Fairchild Semiconductor, FDS6984S Datasheet - Page 2

MOSFET N-CH DUAL 30V 8SOIC

FDS6984S

Manufacturer Part Number
FDS6984S
Description
MOSFET N-CH DUAL 30V 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6984S

Fet Type
2 N-Channel (Dual)
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
19 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
8.5A, 5.5A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 5V
Input Capacitance (ciss) @ Vds
1233pF @ 15V
Power - Max
900mW
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDS6984S

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS6984S
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
FDS6984S-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
BV
I
I
I
Electrical Characteristics
Off Characteristics
On Characteristics
V
∆V
===∆T
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Symbol
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
FS
GS(th)
DS(on)
iss
oss
rss
g
gs
gd
DSS
GS(th)
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate-Body Leakage, Forward V
Gate-Body Leakage, Reverse V
Parameter
(Note 2)
(Note 2)
V
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
V
V
Q2
V
Q1
V
D
D
f = 1.0 MHz
GS
GS
DS
GS
GS
DS
DS
GS
GS
GS
GS
GS
GS
GS
DS
DS
DS
DD
GS
DS
DS
= 1 mA, Referenced to 25°C
= 250 uA, Referenced to 25°C
= 0 V, I
= 0 V, I
= 24 V, V
= 20 V, V
= -20 V, V
= V
= V
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, I
= 10 V, I
= 4.5 V, I
= 10 V, V
= 5 V, I
= 5 V, I
= 15 V, V
= 15 V, I
= 15 V, I
= 15 V, I
= 10V, R
Test Conditions
T
GS
GS
A
, I
, I
= 25°C unless otherwise noted
D
D
D
D
D
D
D
D
D
D
= 1 mA
= 250 µA
= 8.5 A
= 5.5 A
D
D
D
= 1 mA
= 250 µA
D
D
GS
DS
DS
GS
GEN
DS
= 8.5 A
= 8.5 A, T
= 5.5 A
= 5.5 A, T
= 1 A,
= 8.5 A, V
= 5.5 A, V
= 7 A
= 4.6 A
= 0 V
= 0 V
= 5 V
= 0 V,
= 0 V
= 6 Ω
J
J
GS
GS
= 125°C
= 125°C
=5V
= 5 V
Type Min
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
All
All
30
30
30
20
1
1
Typ
1233
462
344
113
106
8.5
2.4
3.1
16
24
23
35
53
48
26
40
40
10
14
25
21
11
11
-6
-4
8
5
7
5
4
Max Units
-100
500
100
19
32
28
40
60
55
16
18
10
25
40
34
20
14
16
12
FDS6680S Rev C (W)
3
3
1
mV/°C
mΩ
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
µA
nA
nA
V
A
S
V

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