FDS6984S Fairchild Semiconductor, FDS6984S Datasheet - Page 7

• Manufacturer Part Number: FDS6984S
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6984S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A, 5.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 1233pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6984S

Typical Characteristics Q1
10
0.01
100
Figure 19. Maximum Safe Operating Area.
8
6
4
2
0
0.1
10
Figure 17. Gate Charge Characteristics.
1
0
0.1
0.005
0.002
0.001
0.05
0.02
0.01
I
D
R
0.5
0.2
0.1
SINGLE PULSE
0.0001
R
= 4.6A
DS(ON)
1
θ JA
V
T
GS
A
= 135
= 25
LIMIT
= 10V
2
o
o
C
C/W
V
DS
D = 0.5
, DRAIN-SOURCE VOLTAGE (V)
Q
0.2
1
g
0.1
, GATE CHARGE (nC)
0.05
4
0.001
DC
0.02
0.01
Single Pulse
10s
1s
Figure 21. Transient Thermal Response Curve.
100ms
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
6
V
10ms
DS
10
= 5V
1ms
0.01
100µs
15V
8
10V
100
10
t , TIME (s ec)
0.1
1
700
600
500
400
300
200
100
30
20
10
0
0.01
0
Figure 18. Capacitance Characteristics.
0
Figure 20. Single Pulse Maximum
1
5
V
0.1
Power Dissipation.
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
P(pk)
C
C
C
t
1
ISS
OSS
RSS
, TIME (sec)
T - T
10
R
Duty Cycle, D = t /t
J
θJA
1
R
15
t
θJA
1
A
(t) = r(t) * R
= P * R
t
2
= 135°C/W
20
SINGLE PULSE
R
θ
θ JA
JA
1
T
10
A
θJA
= 135°C/W
(t)
2
= 25°C
V
100
f = 1MHz
GS
FDS6680S Rev C (W)
25
= 0 V
300
100
30