FDS6984S Fairchild Semiconductor, FDS6984S Datasheet - Page 8

• Manufacturer Part Number: FDS6984S
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6984S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A, 5.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 1233pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6984S

Typical Characteristics
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode
in parallel with PowerTrench MOSFET.
exhibits similar characteristics to a discrete external
Schottky diode in parallel with a MOSFET. Figure 22
shows the reverse recovery characteristic of the
FDS6984S.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
Figure 23. Non-SyncFET (FDS6690A) body
Figure 22. FDS6984S SyncFET body
diode reverse recovery characteristic.
diode reverse recovery characteristic.
10nS/DIV
10nS/DIV
(continued)
This diode
0V
Schottky barrier diodes exhibit significant leakage at
high temperature and high reverse voltage. This will
increase the power in the device.
leakage versus drain-source voltage and
Figure 24. SyncFET body diode reverse
0.00001
0.0001
0.001
0.01
0.1
0
temperature.
V
DS
, REVERSE VOLTAGE (V)
10
125
25
o
o
C
C
20
FDS6680S Rev C (W)
30