FDS6984S Fairchild Semiconductor, FDS6984S Datasheet - Page 3

• Manufacturer Part Number: FDS6984S
• Description: MOSFET N-CH DUAL 30V 8SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6984S

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 19 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8.5A, 5.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 5V
• Input Capacitance (ciss) @ Vds: 1233pF @ 15V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6984S

Notes:
1. R
Scale 1 : 1 on letter size paper
2. See “SyncFET Schottky body diode characteristics” below.
3. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
Symbol
Electrical Characteristics
Drain–Source Diode Characteristics and Maximum Ratings
I
t
Q
V
the drain pins. R
S
rr
SD
θJA
rr
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Maximum Continuous Drain-Source Diode Forward Current
Reverse Recovery Time
Reverse Recovery Charge
Drain-Source Diode Forward
Voltage
θJC
is guaranteed by design while R
Parameter
a)
78°C/W when
mounted on a
0.5in
oz copper
2
pad of 2
θCA
(continued)
is determined by the user's board design.
I
d
V
V
F
iF
GS
GS
= 10A,
/d
= 0 V, I
= 0 V, I
t
= 300 A/µs
Test Conditions
S
S
= 3.5 A
= 1.3 A
b)
T
A
= 25°C unless otherwise noted
125°C/W when
mounted on a
0.02 in
2 oz copper
(Note 3)
2
pad of
(Note 2)
(Note 2)
Type Min
Q2
Q1
Q2
Q2
Q1
c)
Typ
12.5
0.74
0.5
17
135°C/W when
mounted on a
minimum pad.
Max Units
3.0
1.3
0.7
1.2
FDS6680S Rev C (W)
nC
ns
A
V