IRF5810 International Rectifier, IRF5810 Datasheet - Page 2

• Manufacturer Part Number: IRF5810
• Description: MOSFET 2P-CH 20V 2.9A 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5810

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 9.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 16V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:

‚
I
I
V
t
Q
V
V
g
Q
Q
Q
t
t
t
t
C
C
C
SM
R
I
S
rr
d(on)
r
d(off)
f
DSS
V
fs
SD
(BR)DSS
GS(th)
rr
iss
oss
rss
g
gs
gd
DS(on)
Pulse width
(BR)DSS
Repetitive rating; pulse width limited by
2
max. junction temperature.
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
400µs; duty cycle
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
-0.45 –––
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
––– 0.011 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-20
5.4
Surface mounted on 1 in square Cu board
110
130
–––
–––
–––
–––
–––
–––
650
110
––– -100
6.4
1.2
1.7
8.2
60
87
14
62
53
86
-1.2
170
–––
-1.2
–––
-1.0
100
–––
–––
–––
–––
–––
–––
200
–––
135
-25
9.6
1.8
2.6
1.0
90
11
V/°C
m
nC
ns
nC
pF
V
V
V
S
di/dt = -100A/µs ‚
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
V
V
V
ƒ = 1kHz
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
GS
DS
G
= -2.9A
= -1.0A
= 25°C, I
= 25°C, I
= 6.0
= 0V, I
= -4.5V, I
= -2.5V, I
= V
= -10V, I
= -16V, V
= -16V, V
= -10V
= -10V ‚
= 0V
= -16V
= -12V
= 12V
= -4.5V
= -4.5V
GS
Conditions
, I
D
S
F
D
Conditions
= -250µA
D
= -1.0A, V
= -1.0A
D
D
GS
GS
= -250µA
= -2.9A
= -2.9 ‚
= -2.3A ‚
= 0V, T
= 0V
D
www.irf.com
= -1mA
GS
J
G
= 70°C
= 0V ‚
D
S