IRF5810 International Rectifier, IRF5810 Datasheet - Page 6

• Manufacturer Part Number: IRF5810
• Description: MOSFET 2P-CH 20V 2.9A 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5810

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 9.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 16V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Fig 12. Typical On-Resistance Vs. Gate
6
0.10
0.09
0.08
0.07
0.06
0.05
0.04
Fig 14a. Basic Gate Charge Waveform
V
2.0
G
Q
-V GS, Gate -to -Source Voltage (V)
GS
4.0
Voltage
Charge
Q
Q
GD
G
6.0
I D = -2.9A
8.0
10.0
Fig 13. Typical On-Resistance Vs. Drain
0.25
0.20
0.15
0.10
0.05
0.00
Fig 14b. Gate Charge Test Circuit
12V
0
V
GS
Same Type as D.U.T.
Current Regulator
.2 F
2
-I D , Drain Current (A)
50K
-3mA
Current
Current Sampling Resistors
.3 F
4
I
G
V GS = -2.5V
D.U.T.
6
V GS = -4.5V
I
D
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-
V
8
DS
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