IRF5810 International Rectifier, IRF5810 Datasheet - Page 4

• Manufacturer Part Number: IRF5810
• Description: MOSFET 2P-CH 20V 2.9A 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5810

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 9.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 16V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4
100
1000
0.1
10
800
600
400
200
1
0.4
0
Fig 7. Typical Source-Drain Diode
1
T = 150 C
Fig 5. Typical Capacitance Vs.
J
-V
-V
SD
0.6
Drain-to-Source Voltage
DS
,Source-to-Drain Voltage (V)
°
Forward Voltage
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
C rss
C iss
C oss
=
=
=
=
0.8
0V,
C
C
C
gs
gd
ds
T = 25 C
J
+ C
+ C
10
f = 1MHz
gd ,
gd
1.0
°
C
ds
V
1.2
SHORTED
GS
= 0 V
1.4
100
100
0.1
10
Fig 8. Maximum Safe Operating Area
10
1
8
6
4
2
0
0
0
I =
D
Tc = 25°C
Tj = 150°C
Single Pulse
Fig 6. Typical Gate Charge Vs.
-2.9A
-V DS , Drain-toSource Voltage (V)
Gate-to-Source Voltage
2
Q , Total Gate Charge (nC)
G
OPERATION IN THIS AREA
LIMITED BY R DS (on)
4
1
V
V
DS
DS
6
=-16V
=-10V
10
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8
10msec
100µsec
1msec
10
100
12