IRF5810 International Rectifier, IRF5810 Datasheet - Page 3

• Manufacturer Part Number: IRF5810
• Description: MOSFET 2P-CH 20V 2.9A 6TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5810

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 2.9A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2.9A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 9.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 650pF @ 16V
• Power - Max: 960mW
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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0.01
100.0
100
0.1
10.0
10
1
Fig 1. Typical Output Characteristics
1.0
0.1
Fig 3. Typical Transfer Characteristics
0.1
TOP
BOTTOM
1.0
-V
DS
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
-V GS , Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
1.5
1
-1.2V
T J = 25°C
2.0
20µs PULSE WIDTH
T = 25 C
V DS = -15V
20µs PULSE WIDTH
J
10
°
T J = 150°C
2.5
100
3.0
100
0.1
10
2.0
1.5
1.0
0.5
0.0
Fig 4. Normalized On-Resistance
1
Fig 2. Typical Output Characteristics
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
-V
-2.9A
DS
VGS
-10V
-7.0V
-4.5V
-3.0V
-2.5V
-1.8V
-1.5V
-1.2V
Vs. Temperature
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
0
1
20 40 60
-1.2V
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
-4.5V
100
3