TPCF8402(TE85L) Toshiba, TPCF8402(TE85L) Datasheet

MOSFET N/P-CH 30V 3.2A VS-8

TPCF8402(TE85L)

Manufacturer Part Number
TPCF8402(TE85L)
Description
MOSFET N/P-CH 30V 3.2A VS-8
Manufacturer
Toshiba
Datasheet

Specifications of TPCF8402(TE85L)

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
4A, 3.2A
Vgs(th) (max) @ Id
2V @ 1mA
Gate Charge (qg) @ Vgs
10nC @ 10V
Input Capacitance (ciss) @ Vds
470pF @ 10V
Power - Max
530mW
Mounting Type
Surface Mount
Package / Case
VS-8 (2-3U1B)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TPCF8402TR
Portable Equipment Applications
Motor Drive Applications
DC-DC Converter Applications
Absolute Maximum Ratings
Low drain-source ON resistance : P Channel R
High forward transfer admittance : P Channel |Y
Low leakage current : P Channel I
Enhancement-mode
: P Channel V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power
dissipation
(t = 5 s)
Drain power
dissipation
(t = 5 s)
Single pulse avalanche energy (Note 4)
Avalanche current
Repetitive avalanche energy
Single-device value at dual operation
Channel temperature
Storage temperature range
Note: For Notes 1 to 5, refer to the next page.
This transistor is an electrostatic-sensitive device. Handle with caution.
N Channel V
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
(Note 2a)
(Note 2b)
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
DC
Pulse
Single-device operation
Single-device value at
dual operation (Note 3b)
Single-device operation
Single-device value at
dual operation (Note 3b)
th
th
= −0.8 to −2.0 V (V
= 1.3 to 2.5 V (V
GS
(Note 2a, 3b, 5)
= 20 kΩ)
N Channel I
(Note 3a)
(Note 3a)
(Note 1)
(Note 1)
DS
DSS
DS
DSS
N Channel R
N Channel |Y
= 10 V, I
(Ta = 25°C)
Symbol
V
P
P
P
P
V
V
E
E
T
I
I
T
= −10 V, I
DGR
GSS
D (1)
D (2)
D (1)
D (2)
DSS
I
DP
AR
AS
AR
stg
D
ch
TPCF8402
= −10 μA (V
= 10 μA (V
D
= 1mA)
-12.8
DS (ON)
1.35
1.12
0.53
0.33
0.67
DS (ON)
D
-3.2
-1.6
±20
fs
-30
-30
fs
| = 5.9 S (typ.)
| = 6.8 S (typ.)
= −1mA)
DS
−55 to 150
DS
Rating
0.11
= 30 V)
150
= −30 V)
1
= 60 mΩ (typ.)
= 38 mΩ (typ.)
16.0
1.35
1.12
0.53
0.33
±20
4.0
2.6
2.0
30
30
Unit
mJ
mJ
°C
°C
W
V
V
V
A
A
Weight: 0.011 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
8
1
7
2
2-3U1B
TPCF8402
2009-12-10
6
3
Unit: mm
5
4

Related parts for TPCF8402(TE85L)

TPCF8402(TE85L) Summary of contents

Page 1

... TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) Portable Equipment Applications Motor Drive Applications DC-DC Converter Applications • Low drain-source ON resistance : P Channel R • High forward transfer admittance : P Channel |Y • Low leakage current : P Channel I N Channel I • Enhancement-mode : P Channel V = − ...

Page 2

... Without a dot: [[Pb]]/INCLUDES > MCV With a dot: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. ...

Page 3

P-channel Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total ...

Page 4

N-channel Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total ...

Page 5

P-channel I – -3.5 -10 -6 -3 -0.4 -0.6 -0.2 Drain-source voltage – Common source -10 V Pulse test ...

Page 6

P-channel R – (ON) 150 120 -0.8A, -1.6A, -3. -4. -0.8A, -1.6A, -3. -10V 30 0 −80 − Ambient temperature Ta (°C) ...

Page 7

P-channel 1000 Single pulse 100 10 1 0.001 Safe operating area -100 I D max (pulsed Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. -0.1 -0.1 -1 ...

Page 8

N-channel I – 4.5 3.8 8.0 6 0.4 0.2 0.6 Drain-source voltage – Common source Pulse tset ...

Page 9

N-channel R – (ON) 120 Common source Pulse test 100 4. −80 − Ambient temperature Ta (°C) Capacitance – V 1000 100 ...

Page 10

N-channel 1000 Single Pulse 100 10 1 0.001 Safe operating area 100 I D max (Pulsed Single pulse Ta = 25°C Curves must be derated linearly with increase in temperature. 0.1 0.1 1 ...

Page 11

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

Related keywords