TPCF8402(TE85L) Toshiba, TPCF8402(TE85L) Datasheet - Page 5

• Manufacturer Part Number: TPCF8402(TE85L)
• Description: MOSFET N/P-CH 30V 3.2A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8402(TE85L)

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4A, 3.2A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1B)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8402TR

P-channel
100
-4
-2
-8
-6
10
0
1
-5
-4
-3
-2
-1
-0.1
0
0
0
Common source
V DS = -10 V
Pulse test
Common source
V DS = -10 V
Pulse test
-4.5
-6
-0.2
Drain-source voltage V DS
Gate-source voltage V GS
-1
-0.3
-10
Drain current I D (A)
100
-0.4
-2
⎪Y
I
I
D
D
fs
– V
-3.5
– V
⎪ – I
-1
Ta = −55°C
DS
GS
-3.0
25
-0.6
-3
D
25
Ta = −55°C
Common source
Ta = 25°C
Pulse test
-3
-0.8
(V)
(V)
-4
V GS = -2.3
100
-2.8
-2.6
-2.7
-2.5
-1.0
-10
-5
5
1000
-2.0
-1.6
-0.4
-10
-1.2
-0.8
100
-8
-6
-4
-2
10
0
0
0.1
0
0
-10
Common source
Ta = 25°C
Pulse test
-0.8
Drain-source voltage V DS
-2
Gate-source voltage V GS
-1
-3.5
-6
Drain current I D (A)
-4.5
-3.0
R
-4
-2
V
DS (ON)
I
DS
D
-1.6
– V
V GS = -4.5 V
– V
-1
DS
GS
– I
-6
-3
-10
D
Common source
Ta= 25℃
Pulse test
I D = -3.2A
Common source
Ta = 25°C
Pulse test
-2.8
V GS = -2.3 V
-2.7
(V)
(V)
-8
-4
TPCF8402
-2.6
-2.5
2009-12-10
-5
-10
-10