TPCF8302(TE85L) Toshiba, TPCF8302(TE85L) Datasheet - Page 4

• Manufacturer Part Number: TPCF8302(TE85L)
• Description: MOSFET PCH 20V 3A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8302(TE85L)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 59 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1B)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8302TR

100
0.1
10
-5
-4
-3
-2
-1
-5
-4
-3
-1
-2
0
0
1
0.1
0
0
-6
Common source
V DS = -10 V
Pulse Test
-10
-0.2
Drain-source voltage
Gate-source voltage
Drain current
100
-1
-2.5
-0.4
⎪Y
I
Ta = −55°C
I
D
D
-3.0
fs
– V
– V
⎪ – I
-1
Ta = −55°C
-2.0
DS
GS
25
25
-0.6
D
I D (A)
V GS
Common source
Ta = 25°C
Pulse Test
V DS
Common Source
V DS = -10 V
Pulse Test
-2
100
-0.8
(V)
V GS = -1.4
(V)
-1.6
-1.8
-1.0
-10
-3
4
1000
-2.0
-1.6
-1.2
-0.8
-0.4
100
-10
10
-8
-6
-4
-2
0
0
0.1
0
0
-10
-0.75
Common Source
Ta = 25°C
Pulse Test
-6
-1.0
Drain-source voltage
Gate-source voltage V GS
-2
-2.5
-3.0
-2.5
Drain current I D (A)
-1.5
R
-2.0
V
DS (ON)
-4
I
DS
V GS = -2.0V
D
– V
– V
-1
-2.0
-4.5
DS
GS
-3.0
– I
-6
Common source
Ta = 25°C
Pulse Test
I D = -3A
V DS
Common source
Ta = 25℃
Pulse Test
D
-1.8
V GS = -1.4 V
(V)
-4.0
(V)
-8
-1.6
TPCF8302
2006-11-16
-5.0
-10
-10