TPCF8302(TE85L) Toshiba, TPCF8302(TE85L) Datasheet - Page 5

• Manufacturer Part Number: TPCF8302(TE85L)
• Description: MOSFET PCH 20V 3A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8302(TE85L)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 59 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1B)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8302TR

10000
1000
160
120
100
1.6
2.0
1.2
0.8
0.4
80
40
10
-0.1
−80
0
0
0
Common Source
V GS = 0 V
f = 1 MHz
Ta = 25°C
(1)
(2)
(3)
(4)
Common Source
Pulse Test
−40
Drain-source voltage V DS (V)
40
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
V GS = -2.0V
I D = -3A,-1.5A,-0.75A
Capacitance – V
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
ｔ＝5S
-1
0
R
DS (ON)
80
V GS = -2.5V
P
D
-3 -5
40
– Ta
– Ta
120
I D = -3A,-1.5A,-0.75A
-10
C iss
80
DS
I D = -3A
C rss
C oss
V GS = -4.5V
-1.5A,-0.75A
160
120
-30 -50 -100
160
200
5
-0.5
-0.3
-0.1
-2.0
-1.6
-1.2
-0.8
-0.4
-20
-16
-12
-10
-5
-3
-1
-8
-4
−80
0
0
0
0
-4
-8
V DS
-10
Common Source
V DS = -10 V
I D = -200μA
Pulse Test
V DD = -16V
−40
0.2
Drain-source voltage V DS (V)
Ambient temperature Ta (°C)
Total gate charge Q g (nC)
4
Dynamic input / output
-5.0
0.4
0
characteristics
I
DR
V
V DD =-4V
-3.0
th
0.6
– V
40
-16
8
– Ta
-1.0
DS
Common source
I D = -3 A
Ta = 25°C
Pulse Test
0.8
80
Common Source
-8
12
Pulse Test
Ta = 25°C
TPCF8302
V GS = 0 V
V GS
120
2006-11-16
1.0
160
1.2
16
-10
-8
-6
-4
0
-2