TPCF8302(TE85L) Toshiba, TPCF8302(TE85L) Datasheet - Page 6

• Manufacturer Part Number: TPCF8302(TE85L)
• Description: MOSFET PCH 20V 3A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8302(TE85L)

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 59 mOhm @ 1.5A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.2V @ 200µA
• Gate Charge (qg) @ Vgs: 11nC @ 5V
• Input Capacitance (ciss) @ Vds: 800pF @ 10V
• Power - Max: 530mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1B)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TPCF8302TR

100
0.1
10
1
0.1
※ Single pulse
Curves must be derated linearly with
increase in temperature.
I D max (pulse) *
Ta=25℃
Drain-source voltage V DS (V)
1000
100
10
1
Safe Operating Area
0.001
1
Single pulse
1 ms *
0.01
10
100 µs *
V DSS max
0.1
100
Pulse width
r
6
th
– t
1
w
t w (s)
(4)
Device mounted on a glass-epoxy board (a) (Note 2a)
(1) Single-device operation (Note 3a)
(2) Single-device value at dual operation (Note 3b)
Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Single-device operation (Note 3a)
(4) Single-device value at dual operation (Note 3b)
10
100
(2)
(3)
(1)
1000
TPCF8302
2006-11-16