SI3443DV Fairchild Semiconductor, SI3443DV Datasheet
SI3443DV
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SI3443DV Summary of contents
Page 1
... DS(ON) • 25°C unless otherwise noted A Parameter (Note 1) (Note 1a) (Note 1a) (Note 1b) (Note 1a) (Note 1) Device Reel Size Si3443DV 7’’ April 2001 DS(ON) GS DS(ON Ratings Units - -20 1.6 W 0.8 -55 to +150 C 78 C/W 30 C/W Tape Width Quantity 8mm 3000 units Si3443DV, REV A ...
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... - 1.0 MHz GEN determined by the user's board design. CA Min Typ Max Units -20 V -16 mV 100 nA -100 nA -0.4 -0.7 -1.5 V 2.5 mV/ C 0.054 0.065 0.076 0.105 0.077 0.100 - 640 pF 180 7 1.7 nC 1.6 nC -1.3 A -0.75 -1.2 V (Note 2) Si3443DV, REV A ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current = -2.5V GS -3.0V -3.5V -4.0V -4. DRAIN CURRENT ( - 125 GATE TO SOURCE VOLTAGE ( 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD and Temperature. Si3443DV, REV 1.4 ...
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... Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design MHz ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE 156 C 100 1000 SINGLE PULSE TIME (SEC) Power Dissipation R ( 156°C/W JA P(pk ( Duty Cycle 100 300 Si3443DV, REV A ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ HiSeC™ DenseTrench™ ...