SI3443DV Fairchild Semiconductor, SI3443DV Datasheet - Page 2

• Manufacturer Part Number: SI3443DV
• Description: MOSFET P-CH 20V 4A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of SI3443DV

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 640pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3443DVFSTR

Notes:
1. R
2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%
Electrical Characteristics
Off Characteristics
BV
I
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
V
Symbol
DSS
GSSF
GSSR
D(on)
d(on)
r
d(off)
f
S
FS
BV
V
of the drain pins. R
GS(th)
DS(on)
iss
oss
rss
SD
g
gs
gd
GS(th)
DSS
T
T
JA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface
a) 78 C/W when mounted on a 1.0 in
b) 156 C/W when mounted on a minimum pad of 2 oz.copper.
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
JC
is guaranteed by design while R
Parameter
(Note 2)
2
pad of 2 oz. copper.
(Note 2)
CA
is determined by the user's board design.
T
A
= 25°C unless otherwise noted
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
D
D
GS
DS
GS
GS
DS
GS
GS
GS
GS
DS
DS
DD
GS
DS
GS
GS
= -250 A, Referenced to 25 C
= -250 A, Referenced to 25 C
= -16 V, V
= V
= -5 V, I
= -10 V, V
= -10 V, I
= 0 V, I
= 8 V, V
= -8 V, V
= -4.5 V, I
= -4.5 V, I
= -2.5 V, I
= -4.5 V, V
= -10 V, I
= -4.5 V, R
= -4.5 V,
= 0 V, I
Test Conditions
GS
, I
D
S
D
D
DS
DS
= -250 A
= -1.3 A
D
= -250 A
D
= -4 A
D
D
D
GS
GS
DS
= 0 V
= -1 A
GEN
= -4 A
= 0 V
= -4 A
= -4 A, T
= -3.2 A
= 0 V
= 0 V
= -5 V
= 6
J
=125 C
(Note 2)
Min Typ Max Units
-0.4
-20
-10
0.054
0.076
0.077
-0.75
-0.7
640
180
-16
2.5
7.2
1.7
1.6
90
11
19
26
35
9
0.065
0.105
0.100
-100
100
-1.5
-1.3
-1.2
20
30
42
55
10
-1
Si3443DV, REV A
mV/ C
mV/ C
nA
nA
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
V
V
A
S
A
V
A