SI3443DV Fairchild Semiconductor, SI3443DV Datasheet - Page 4

• Manufacturer Part Number: SI3443DV
• Description: MOSFET P-CH 20V 4A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of SI3443DV

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 640pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3443DVFSTR

Typical Characteristics
5
4
3
2
1
0
0.01
100
0.1
10
0
Figure 9. Maximum Safe Operating Area
1
Figure 7. Gate-Charge Characteristics
0.1
I
D
= -4A
R
DS(ON)
SINGLE PULSE
0.005
R
0.05
0.02
0.01
0.5
0.2
0.1
V
0.00001
JA
T
LIMIT
GS
1
= 156
A
2
= 25
= -4.5V
D = 0.5
o
o
-V
C/W
C
0.2
DS
0.1
, DRAIN-SOURCE VOLTAGE (V)
Q
0.05
g
1
, GATE CHARGE (nC)
0.02
4
DC
0.0001
0.01
1s
100ms
Single Pulse
V
10ms
DS
Figure 11. Transient Thermal Response Curve.
= -5V
1ms
6
-10V
10
100 s
0.001
-15V
8
Transient themal response will change depending on the circuit board design.
Thermal characterization performed using the conditions described in Note 1b.
0.01
100
10
t , TIME (sec)
1
1250
1000
0.1
5
4
3
2
1
0
750
500
250
0.1
0
Figure 8. Capacitance Characteristics
0
Figure 10. Single Pulse Maximum
1
-V
1
Power Dissipation
DS
5
, DRAIN TO SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
P(pk)
T - T
Duty Cycle, D = t / t
R
J
R
JA
t
10
1
A
10
10
JA
(t) = r(t) * R
t
= P * R
2
= 156°C/W
C
C
C
OSS
ISS
RSS
JA
1
(t)
JA
2
100
SINGLE PULSE
R
100
15
JA
T
A
= 156
= 25
f = 1 MHz
V
GS
300
o
o
Si3443DV, REV A
C/W
C
= 0 V
1000
20