SI3443DV Fairchild Semiconductor, SI3443DV Datasheet - Page 3

• Manufacturer Part Number: SI3443DV
• Description: MOSFET P-CH 20V 4A SSOT-6
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of SI3443DV

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 65 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 640pF @ 10V
• Power - Max: 800mW
• Mounting Type: Surface Mount
• Package / Case: 6-SSOT, SuperSOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI3443DVFSTR

Typical Characteristics
10
20
15
10
8
6
4
2
0
5
0
0.4
1.5
1.4
1.3
1.2
1.1
0.9
0.8
0.7
0
1
Figure 1. On-Region Characteristics.
V
Figure 5. Transfer Characteristics.
-50
Figure 3. On-Resistance Variation
DS
V
GS
= -5V
= -4.5V
V
I
D
-25
GS
0.8
= - 4A
1
= - 4.5V
-V
-3.5V
with Temperature.
GS
-V
T
, GATE TO SOURCE VOLTAGE (V)
-3.0V
0
J
DS
, JUNCTION TEMPERATURE (
, DRAIN-SOURCE VOLTAGE (V)
-2.5V
1.2
2
25
-2.0V
50
-1.5V
1.6
3
T
75
A
= -55
o
C
100
o
C)
2
4
125
125
o
C
25
o
C
2.4
150
5
0.25
0.15
0.05
0.001
0.2
0.1
0.01
100
0.1
0
1.6
1.4
1.2
0.8
10
1
Figure 6. Body Diode Forward Voltage
1
1
with Drain Current and Gate Voltage.
0
0
Figure 4. On-Resistance Variation
Figure 2. On-Resistance Variation
V
GS
Variation with Source Current
with Gate-to-Source Voltage.
= 0V
V
0.2
GS
-V
= -2.5V
SD
-V
4
and Temperature.
, BODY DIODE FORWARD VOLTAGE (V)
2
GS
, GATE TO SOURCE VOLTAGE (V)
0.4
T = 125
- I
D
-3.0V
, DRAIN CURRENT (A)
o
25
8
C
0.6
o
C
-55
-3.5V
3
o
C
T
0.8
A
T
-4.0V
A
= 125
12
= 25
-4.5V
o
o
C
C
1
4
I
D
16
= -2A
1.2
Si3443DV, REV A
1.4
5
20