SI3442BDV-T1-E3 Vishay, SI3442BDV-T1-E3 Datasheet

MOSFET N-CH 20V 3A 6-TSOP

SI3442BDV-T1-E3

Manufacturer Part Number
SI3442BDV-T1-E3
Description
MOSFET N-CH 20V 3A 6-TSOP
Manufacturer
Vishay
Datasheet

Specifications of SI3442BDV-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
57 mOhm @ 4A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
1.8V @ 250µA
Gate Charge (qg) @ Vgs
5nC @ 4.5V
Input Capacitance (ciss) @ Vds
295pF @ 10V
Power - Max
860mW
Mounting Type
Surface Mount
Package / Case
6-TSOP
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain
Resistance Drain-source Rds (on)
0.09 Ohm @ 2.5 V
Forward Transconductance Gfs (max / Min)
11.3 S
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3 A
Power Dissipation
860 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
3A
Drain Source Voltage Vds
2.5V
On Resistance Rds(on)
70mohm
Rds(on) Test Voltage Vgs
4.5V
Voltage Vgs Max
12V
Operating Temperature Range
-55°C To
Threshold Voltage Vgs Typ
1.8V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI3442BDV-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI3442BDV-T1-E3
Manufacturer:
Vishay
Quantity:
36 000
Part Number:
SI3442BDV-T1-E3
Manufacturer:
TI
Quantity:
101
Part Number:
SI3442BDV-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Note:
a. Surface Mounted on FR4 board, t ≤ 5 s.
Document Number: 72504
S09-2110-Rev. E, 12-Oct-09
Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free)
Marking Code:
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
PRODUCT SUMMARY
V
DS
20
(V)
3 mm
Si3442BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
2Bxxx
0.057 at V
0.090 at V
Top View
1
2
3
TSOP-6
2.85 mm
R
DS(on)
J
a
= 150 °C)
a
GS
GS
6
5
4
(Ω)
= 4.5 V
= 2.5 V
N-Channel 2.5-V (G-S) MOSFET
a
a
A
= 25 °C, unless otherwise noted
I
D
Steady State
Steady State
4.2
3.4
T
T
T
T
(A)
A
A
A
A
t ≤ 5 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
• Halogen-free According to IEC 61249-2-21
• TrenchFET
• Compliant to RoHS Directive 2002/95/EC
Symbol
Symbol
T
R
R
Definition
J
V
V
I
P
, T
DM
I
I
thJA
thJF
GS
DS
D
S
D
stg
®
Power MOSFET
Typical
(3) G
1.67
1.07
120
5 s
4.2
3.4
1.4
75
70
- 55 to 150
N-Channel MOSFET
± 12
20
20
(1, 2, 5, 6) D
(4) S
Steady State
Maximum
0.72
0.86
0.55
100
145
3.0
2.4
85
Vishay Siliconix
Si3442BDV
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI3442BDV-T1-E3 Summary of contents

Page 1

... GS 20 0.090 2 TSOP-6 Top View 2.85 mm Ordering Information: Si3442BDV-T1-E3 (Lead (Pb)-free) Si3442BDV-T1-GE3 (Lead (Pb)-free and Halogen-free) Marking Code: 2Bxxx ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current Continuous Source Current (Diode Conduction) a Maximum Power Dissipation ...

Page 2

... Si3442BDV Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...

Page 3

... V - Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72504 S09-2110-Rev. E, 12-Oct- 2.0 2.5 3.0 3 °C J 0.8 1.0 1.2 Si3442BDV Vishay Siliconix 480 400 C 320 iss 240 160 C oss 80 C rss Drain-to-Source Voltage (V) DS Capacitance 1 4.5 V ...

Page 4

... Si3442BDV Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.3 0.2 0.1 I 0.0 - 0.1 - 0.2 - 0.3 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0. Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations ...

Page 5

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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