SI3442BDV-T1-E3 Vishay, SI3442BDV-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI3442BDV-T1-E3
• Description: MOSFET N-CH 20V 3A 6-TSOP
• Manufacturer: Vishay

Specifications of SI3442BDV-T1-E3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 57 mOhm @ 4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 5nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 295pF @ 10V
• Power - Max: 860mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSOP
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain
• Resistance Drain-source Rds (on): 0.09 Ohm @ 2.5 V
• Forward Transconductance Gfs (max / Min): 11.3 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3 A
• Power Dissipation: 860 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 3A
• Drain Source Voltage Vds: 2.5V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Voltage Vgs Max: 12V
• Operating Temperature Range: -55°C To
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI3442BDV-T1-E3TR

Si3442BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72504.
www.vishay.com
4
- 0.1
- 0.2
- 0.3
- 0.4
- 0.5
- 0.6
0.3
0.2
0.1
0.0
0.01
- 50
0.1
2
1
10 -
- 25
0.05
4
Duty Cycle = 0.5
0.2
0.1
0.02
Single Pulse
0
Threshold Voltage
T
J
25
- Temperature (°C)
10 -
3
50
I
D
= 250 µA
Normalized Thermal Transient Impedance, Junction-to-Ambient
75
0.01
100
100
0.1
10 -
10
1
0.1
2
Limited by R
* V
125
GS
Single Pulse
T
> minimum V
A
150
V
Square Wave Pulse Duration (s)
= 25 °C
DS
DS(on)*
Safe Operating Area
- Drain-to-Source Voltage (V)
10 -
1
1
BVDSS Limited
GS
at which R
I
DM
Limited
DS(on)
10
8
6
4
2
0
1
0.01
is specified
10 µs
100 µs
1 ms
10 ms
100 ms
1 s, 10 s
100 s, DC
0.1
100
10
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
1
-
Single Pulse
Time (s)
T
T
t
A
1
A
S09-2110-Rev. E, 12-Oct-09
= P
= 25 °C
t
2
Document Number: 72504
DM
10
Z
thJA
thJA
100
t
t
1
2
(t)
= 120 °C/W
100
600
600