ZXMP10A17E6TA Diodes Zetex, ZXMP10A17E6TA Datasheet - Page 2

• Manufacturer Part Number: ZXMP10A17E6TA
• Description: MOSFET P-CH TRENCH -100V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMP10A17E6TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 424pF @ 50V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP10A17E6TR

Thermal Characteristics
Maximum Ratings
Drain-Source voltage
Gate-Source voltage
Continuous Drain current
Pulsed Drain current
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
Power dissipation
Linear derating factor
Thermal Resistance, Junction to Ambient
Operating and storage temperature range
Notes:
ZXMP10A17E6
Document Number DS32027 Rev. 3 - 2
1. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
2. Same as note (1), except the device is measured at t ≤ 5 sec.
3. Same as note (1), except the device is pulsed with D= 0.02 and pulse width 300 µs. The pulse current is limited by the maximum junction temperature.
measured when operating in a steady-state condition.
Characteristic
Characteristic
@T
V
V
GS
GS
A
= 10V
= 25°C unless otherwise specified
= 10V
@T
A
= 25°C unless otherwise specified
(Note 2)
T
(Note 1)
(Note 3)
(Note 2)
(Note3 )
(Note 1)
(Note 2)
(Note 1)
(Note 2)
A
= 70°C (Note 2)
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Symbol
Symbol
T
J
V
R
V
, T
I
I
P
DSS
I
DM
SM
I
θ JA
GS
D
S
D
STG
Diodes Incorporated
A Product Line of
-55 to 150
Value
Value
-100
13.7
-1.6
-1.3
-1.3
-7.7
-2.1
-7.7
±20
113
1.1
8.8
1.7
73
ZXMP10A17E6
© Diodes Incorporated
December 2009
mW/°C
°C/W
Unit
Unit
°C
W
V
A
A
A
V
A