ZXMP10A17E6TA Diodes Zetex, ZXMP10A17E6TA Datasheet - Page 5

• Manufacturer Part Number: ZXMP10A17E6TA
• Description: MOSFET P-CH TRENCH -100V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMP10A17E6TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 424pF @ 50V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP10A17E6TR

Typical Characteristics
ZXMP10A17E6
Document Number DS32027 Rev. 3 - 2
0.01
0.01
100
0.1
0.1
10
Typical Transfer Characteristics
10
On-Resistance v Drain Current
0.01
1
1
1
T = 25°C
0.1
-V
-V
Output Characteristics
DS
GS
3
-I
-V
T = 150°C
D
Drain-Source Voltage (V)
GS
Gate-Source Voltage (V)
0.1
Drain Current (A)
4V
1
10V
4.5V
1
4
-V
T = 25°C
5V
DS
T = 25°C
7V
= 10V
10
7V
10
-V
4.5V
5V
4V
GS
10V
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Normalised Curves v Temperature
1E-3
0.01
0.01
0.1
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
Source-Drain Diode Forward Voltage
10
0.1
10
1
-50
0.2
1
T = 150°C
0.1
-V
-V
Tj Junction Temperature (°C)
Output Characteristics
DS
SD
0.4
0
Drain-Source Voltage (V)
Source-Drain Voltage (V)
T = 150°C
Diodes Incorporated
A Product Line of
0.6
1
V
I
D
GS
50
V
I
= -250uA
D
GS
= V
= - 1.4A
= -10V
0.8
DS
T = 25°C
10V
100
ZXMP10A17E6
10
1.0
7V
-V
R
V
4V
5V
4.5V
3.5V
3V
DS(on)
GS(th)
GS
© Diodes Incorporated
150
1.2
December 2009