ZXMP10A17E6TA Diodes Zetex, ZXMP10A17E6TA Datasheet - Page 4

• Manufacturer Part Number: ZXMP10A17E6TA
• Description: MOSFET P-CH TRENCH -100V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMP10A17E6TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 424pF @ 50V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP10A17E6TR

Electrical Characteristics
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS
Gate Threshold Voltage
Static Drain-Source On-Resistance (Note 4)
Forward Transconductance (Notes 4 & 5)
Diode Forward Voltage (Note 4)
Reverse recovery time (Note 5)
Reverse recovery charge (Note 5)
DYNAMIC CHARACTERISTICS (Note 5)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 6)
Total Gate Charge (Note 6)
Gate-Source Charge (Note 6)
Gate-Drain Charge (Note 6)
Turn-On Delay Time (Note 6)
Turn-On Rise Time (Note 6)
Turn-Off Delay Time (Note 6)
Turn-Off Fall Time (Note 6)
Notes:
ZXMP10A17E6
Document Number DS32027 Rev. 3 - 2
4. Measured under pulsed conditions. Pulse width ≤ 300μs; duty cycle ≤ 2%
5. For design aid only, not subject to production testing.
6. Switching characteristics are independent of operating junction temperatures.
Characteristic
@T
A
= 25°C unless otherwise specified
Symbol
R
BV
V
DS (ON)
t
t
I
I
C
V
C
C
GS(th)
Q
Q
D(on)
D(off)
DSS
GSS
Q
Q
Q
g
t
oss
t
t
SD
rss
DSS
rr
iss
fs
gs
gd
r
f
rr
g
g
www.diodes.com
-100
Min
-2.0
4 of 8
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-0.85
36.6
29.8
10.7
13.4
Typ
424
2.8
7.1
1.7
3.8
3.0
3.5
7.2
33
48
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0.350
0.450
±100
-0.95
Max
-0.5
-4.0
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Diodes Incorporated
A Product Line of
Unit
μA
nA
nC
nC
nC
nC
nC
ns
pF
pF
pF
ns
ns
ns
ns
Ω
V
V
S
V
I
V
V
I
V
V
V
I
I
V
f= 1MHz
V
V
V
I
D
D
S
S
D
DS
GS
GS
GS
DS
DS
GS
GS
DD
= -250μA, V
= -1.7A, V
= -1.5A, di/dt= 100A/μs
= -1A, R
= -250μA, V
= -100V, V
= -15V, I
= -50V, V
= -50V, V
= ±20V, V
= -10V, I
= -6V, I
= -6.0V
= -10V
ZXMP10A17E6
Test Condition
G
D
GS
≅ 6.0Ω
D
D
= -1.2A
GS
GS
= -1.4A
DS
= -1.4A
DS
GS
= 0V
GS
= 0V
= -10V
= 0V
= V
= 0V
= 0V
V
I
© Diodes Incorporated
D
December 2009
DS
GS
= -1.4A
= -50V