ZXMP10A17E6TA Diodes Zetex, ZXMP10A17E6TA Datasheet - Page 6

• Manufacturer Part Number: ZXMP10A17E6TA
• Description: MOSFET P-CH TRENCH -100V SOT23-6
• Manufacturer: Diodes Zetex

Specifications of ZXMP10A17E6TA

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 350 mOhm @ 1.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.3A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.1nC @ 5V
• Input Capacitance (ciss) @ Vds: 424pF @ 50V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: ZXMP10A17E6TR

Typical Characteristics - continued
Test Circuits
ZXMP10A17E6
Document Number DS32027 Rev. 3 - 2
600
500
400
300
200
100
Capacitance v Drain-Source Voltage
0
V
0.1
G
-V
Q
GS
DS
Basic gate charge waveform
t
r
Switching time waveforms
t
(on)
C
- Drain - Source Voltage (V)
RSS
t
C
d(of )
ISS
1
Q
Q
G
C
GD
OSS
Charge
10
t
r
t
(on)
V
f = 1MHz
GS
t
d(on)
= 0V
www.diodes.com
100
90%
10%
V
V
6 of 8
DS
GS
Gate-Source Voltage v Gate Charge
10
8
6
4
2
0
Switching time test circuit
0
Gate charge test circuit
Pulse width
Duty factor 0.1%
12V
R
G
2
Diodes Incorporated
0.2 F
1 S
Q - Charge (nC)
A Product Line of
V
regulator
GS
Current
50k
4
I
G
V
GS
R
6
D.U.T
Same as
D
D.U.T
V
ZXMP10A17E6
DS
8
V
I
D
DS
I
D
= -1.4A
V
DS
= -50V
V
© Diodes Incorporated
DD
December 2009
10