SI2319DS-T1-E3 Vishay, SI2319DS-T1-E3 Datasheet - Page 2

• Manufacturer Part Number: SI2319DS-T1-E3
• Description: MOSFET P-CH 40V 2.3A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2319DS-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 82 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 20V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -3A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2319DS-T1-E3TR

Si2319DS
Vishay Siliconix
Notes:
a. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
b. For design aid only, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
SPECIFICATIONS T
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching
Turn-On Time
Turn-Off Time
b
c
a
a
a
J
= 25 °C, unless otherwise noted
a
Symbol
R
V
I
t
t
I
C
I
V
GS(th)
D(on)
DS(on)
V
Q
C
C
Q
d(on)
d(off)
GSS
DSS
Q
g
oss
t
t
DS
SD
rss
iss
fs
gs
gd
r
f
g
V
V
DS
DS
I
V
= - 40 V, V
D
V
= - 20 V, V
V
V
V
V
V
V
V
V
I
DS
GS
S
DS
DS
≅ - 1.0 A, V
GS
GS
DS
DD
DS
DS
= - 1.25 A, V
Test Conditions
= - 20 V, V
= - 4.5 V, I
= V
≤ - 5 V, V
= - 10 V, I
= 0 V, I
= 0 V, V
= - 40 V, V
= - 20 V, R
= - 5 V, I
GS
I
R
D
g
GS
≅ - 3 A
GS
, I
= 6 Ω
D
D
GS
GEN
= 0 V, T
= 0 V, f = 1 MHz
GS
D
= - 250 µA
= - 250 µA
D
GS
D
= - 3.0 A
GS
GS
= ± 20 V
L
= - 3.0 A
= - 2.4 A
= - 10 V
= - 4.5 V
= 20 Ω
= - 10 V
= 0 V
= 0 V
J
= 55 °C
Min.
- 40
- 1
- 6
Limits
0.065
0.100
Typ.
- 0.8
11.3
470
7.0
1.7
3.3
S09-0130-Rev. C, 02-Feb-09
85
65
15
25
25
7
Document Number: 72315
± 100
0.082
0.130
Max.
- 3.0
- 1.2
- 10
- 1
17
15
25
40
40
Unit
nA
µA
nC
pF
ns
Ω
V
A
S
V