SI2319DS-T1-E3 Vishay, SI2319DS-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI2319DS-T1-E3
• Description: MOSFET P-CH 40V 2.3A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2319DS-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 82 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 20V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -3A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2319DS-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72315.
Document Number: 72315
S09-0130-Rev. C, 02-Feb-09
0.01
0.1
2
1
10
-4
0.1
Duty Cycle = 0.5
0.2
0.02
0.05
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Ambient
10
-2
Square Wave Pulse Duration (s)
10
-1
1
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
- T
10
A
t
1
= P
t
2
DM
Z
thJA
Vishay Siliconix
thJA
t
t
1
2
(t)
= 166 °C/W
Si2319DS
100
www.vishay.com
600
5