SI2319DS-T1-E3 Vishay, SI2319DS-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI2319DS-T1-E3
• Description: MOSFET P-CH 40V 2.3A SOT23-3
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI2319DS-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 82 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 2.3A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 470pF @ 20V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2.3 A
• Power Dissipation: 750 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -3A
• Drain Source Voltage Vds: -40V
• On Resistance Rds(on): 130mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: -3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI2319DS-T1-E3TR

Si2319DS
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.1
0.6
0.4
0.2
0.0
20
10
1
- 50
0
- 25
Source-Drain Diode Forward Voltage
0.2
V
I
D
SD
T
0
= 250 µA
J
- Source-to-Drain Voltage (V)
Threshold Voltage
= 150 °C
0.4
T
J
25
- Temperature (°C)
0.6
50
100.0
10.0
0.01
75
1.0
0.1
0.8
0.1
T
100
J
* V
= 25 °C
Limited by
Safe Operating Area, Junction-to-Case
R
1.0
GS
DS(on)
125
(
> minimum V
V
Single Pulse
T
DS
*
A
= 25 °C
- Drain-to-Source Voltage (V)
1.2
150
1
GS
at which R
10
DS(on)
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
10
8
6
4
2
0
is specified
0.01
0
On-Resistance vs. Gate-to-Source Voltage
10 ms
10 µs
100 µs
1 ms
100 ms
10 s, 1 s
100 s, DC
100
0.1
V
2
GS
- Gate-to-Source Voltage (V)
Single Pulse Power
4
1
Time (s)
Single Pulse
T
A
I
S09-0130-Rev. C, 02-Feb-09
D
= 25 °C
= 3 A
Document Number: 72315
10
6
100
8
10
1000