SI9435BDY-T1-E3 Vishay, SI9435BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI9435BDY-T1-E3
• Description: MOSFET P-CH 30V 4.1A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI9435BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.042 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Power Dissipation Pd: 2.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI9435BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72245
S09-0870-Rev. D, 18-May-09
V
GS
0.15
0.12
0.09
0.06
0.03
0.00
= 10 V thru 6 V
10
30
25
20
15
10
8
6
4
2
0
5
0
0.0
0
0
V
I
On-Resistance vs. Drain Current
D
3.2
4
DS
1
= 3.5 A
V
V
DS
= 15 V
GS
Q
Output Characteristics
- Drain-to-Source Voltage (V)
g
I
= 4.5 V
D
- Total Gate Charge (nC)
- Drain Current (A)
6.4
Gate Charge
8
2
5 V
12
9.6
3
V
4 V
V
GS
3 V
GS
= 10 V
= 6 V
12.8
16
4
20
16.0
5
1100
880
660
440
220
1.6
1.4
1.2
1.0
0.8
0.6
30
25
20
15
10
0
5
0
- 50
0
0
On-Resistance vs. Junction Temperature
V
I
D
- 25
GS
C
= 5.7 A
rss
5
= 10 V
1
V
T
V
DS
0
Transfer Characteristics
J
GS
- Junction Temperature (°C)
- Drain-to-Source Voltage (V)
- Gate-to-Source Voltage (V)
10
25
Capacitance
25 °C
2
T
C
C
C
50
= 125 °C
15
oss
iss
Vishay Siliconix
Si9435BDY
3
75
20
- 55 °C
100
www.vishay.com
4
25
125
150
30
5
3