SI9435BDY-T1-E3 Vishay, SI9435BDY-T1-E3 Datasheet - Page 5

• Manufacturer Part Number: SI9435BDY-T1-E3
• Description: MOSFET P-CH 30V 4.1A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI9435BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.042 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Power Dissipation Pd: 2.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI9435BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72245.
Document Number: 72245
S09-0870-Rev. D, 18-May-09
0.01
0.01
0.1
0.1
2
1
2
1
10 -
10 -
0.02
0.05
4
4
Duty Cycle = 0.5
0.2
0.1
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
Single Pulse
10 -
3
10 -
3
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Foot
10 -
2
Square Wave Pulse Duration (s)
Square Wave Pulse Duration (s)
10 -
2
10 -
1
10 -
1
1
10
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
DM
JM
-
T
t
1
1
A
= P
Vishay Siliconix
t
2
DM
Si9435BDY
Z
thJA
100
thJA
t
t
1
2
(t)
= 70 °C/W
www.vishay.com
600
10
5