SI9435BDY-T1-E3 Vishay, SI9435BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI9435BDY-T1-E3
• Description: MOSFET P-CH 30V 4.1A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r

Specifications of SI9435BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 42 mOhm @ 5.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 4.1A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.042 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.1 A
• Power Dissipation: 1300 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -5.7A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 70mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Power Dissipation Pd: 2.5W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI9435BDY-T1-E3TR

Si9435BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
50
10
1
- 50
0.0
- 25
Source-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
Threshold Voltage
- Source-to-Drain Voltage (V)
T
0.4
= 150 °C
J
- Temperature (°C)
25
0.6
50
I
D
= 250 µA
75
0.8
0.01
100
0.1
T
100
10
J
1
0.1
= 25 °C
1.0
Limited by R
* V
125
Safe Operating Area, Junction-to-Foot
DS
> minimum V
150
1.2
V
DS
DS(on)
Single Pulse
- Drain-to-Source Voltage (V)
T
C
1
= 25 °C
*
GS
at which R
DS(on)
10
0.20
0.16
0.12
0.08
0.04
0.00
150
120
90
60
30
0
is specified
10 -
0
On-Resistance vs. Gate-to-Source Voltage
3
Single Pulse Power, Junction-to-Ambient
1 ms
10 ms
100 ms
1 s
10 s
DC
2
100
10 -
V
GS
2
- Gate-to-Source Voltage (V)
4
Time (s)
I
S09-0870-Rev. D, 18-May-09
D
= 5.7 A
10
Document Number: 72245
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