SI4431BDY-T1-E3 Vishay, SI4431BDY-T1-E3 Datasheet - Page 3

• Manufacturer Part Number: SI4431BDY-T1-E3
• Description: MOSFET P-CH 30V 5.7A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI4431BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -7.5A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Power Dissipation Pd: 2.5W
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.03Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4431BDY-T1-E3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
0.08
0.06
0.04
0.02
0.00
10
30
10
8
6
4
2
0
1
0.0
0
0
V
I
V
D
DS
Source-Drain Diode Forward Voltage
GS
= 7.5 A
0.2
On-Resistance vs. Drain Current
5
= 15 V
= 4.5 V
5
V
SD
Q
0.4
g
- Source-to-Drain Voltage (V)
- Total Gate Charge (nC)
10
I
D
T
- Drain Current (A)
Gate Charge
J
10
= 150 °C
0.6
15
0.8
15
20
T
J
1.0
= 25 °C
V
GS
20
= 10 V
25
1.2
30
25
1.4
1600
1400
1200
1000
0.10
0.08
0.06
0.04
0.02
0.00
800
600
400
200
1.6
1.4
1.2
1.0
0.8
0.6
0
- 50
0
0
On-Resistance vs. Gate-to-Source Voltage
On-Resistance vs. Junction Temperature
C
V
I
- 25
D
rss
GS
= 7.5 A
I
D
= 10 V
= 2 A
2
6
V
V
GS
DS
0
T
C
J
oss
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
- Drain-to-Source Voltage (V)
2 5
Capacitance
12
4
C
5 0
I
D
Vishay Siliconix
iss
= 7.5 A
Si4431BDY
18
6
7 5
www.vishay.com
100
24
8
125
150
10
30
3