SI4431BDY-T1-E3 Vishay, SI4431BDY-T1-E3 Datasheet - Page 5

MOSFET P-CH 30V 5.7A 8-SOIC

SI4431BDY-T1-E3

Manufacturer Part Number
SI4431BDY-T1-E3
Description
MOSFET P-CH 30V 5.7A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Type
Power MOSFETr

Specifications of SI4431BDY-T1-E3

Transistor Polarity
P-Channel
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
5.7A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.03 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
5.7 A
Power Dissipation
1500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
-7.5A
Drain Source Voltage Vds
-30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
-4.5V
Threshold Voltage Vgs Typ
-1V
Power Dissipation Pd
2.5W
Number Of Elements
1
Polarity
P
Channel Mode
Enhancement
Drain-source On-res
0.03Ohm
Drain-source On-volt
30V
Gate-source Voltage (max)
±20V
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
8
Package Type
SOIC N
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4431BDY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4431BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
2 500
Part Number:
SI4431BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
37 500
Part Number:
SI4431BDY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
SI4431BDY-T1-E3
Manufacturer:
VISHAY/威世
Quantity:
20 000
Part Number:
SI4431BDY-T1-E3
0
Company:
Part Number:
SI4431BDY-T1-E3
Quantity:
70 000
Company:
Part Number:
SI4431BDY-T1-E3
Quantity:
70 000
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72092.
Document Number: 72092
S09-0131-Rev. C, 02-Feb-09
0.01
0.1
2
1
10
-4
0.05
Duty Cycle = 0.5
0.1
0.02
0.2
Single Pulse
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si4431BDY
www.vishay.com
10
5

Related parts for SI4431BDY-T1-E3