SI4431BDY-T1-E3 Vishay, SI4431BDY-T1-E3 Datasheet - Page 4

• Manufacturer Part Number: SI4431BDY-T1-E3
• Description: MOSFET P-CH 30V 5.7A 8-SOIC
• Manufacturer: Vishay
• Series: TrenchFET®r
• Type: Power MOSFETr

Specifications of SI4431BDY-T1-E3

• Transistor Polarity: P-Channel
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 5.7A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Power - Max: 1.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.03 Ohm @ 10 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 5.7 A
• Power Dissipation: 1500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: -7.5A
• Drain Source Voltage Vds: -30V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Threshold Voltage Vgs Typ: -1V
• Power Dissipation Pd: 2.5W
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.03Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±20V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SI4431BDY-T1-E3TR

Si4431BDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
- 0.2
- 0.4
0.6
0.4
0.2
0.0
0.01
0.1
- 50
2
1
10
- 4
- 25
Duty Cycle = 0.5
0.05
0.02
Single Pulse
0.2
0.1
0
Threshold Voltage
T
J
- T emperature (°C)
10
2 5
I
D
- 3
= 250 µA
5 0
Normalized Thermal Transient Impedance, Junction-to-Ambient
7 5
0.01
100
0.1
10
10
100
1
0.1
- 2
Limited by R
* V
Limited
I
125
D(on)
GS
Single Pulse
T
> minimum V
A
V
= 25 °C
DS
150
Square Wave Pulse Duration (s)
DS(on)*
- Drain-to-Source Voltage (V)
Safe Operating Area
10
1
- 1
GS
BVDSS Limited
at which R
DS(on)
10
50
40
30
20
10
1
0
10
I
DM
is specified
- 3
Limited
P(t) = 0.0001
P(t) = 0.001
P(t) = 0.01
P(t) = 0.1
P(t) = 1
P(t) = 10
DC
10
- 2
100
1 0
Single Pulse Power
Notes:
1. Duty Cycle, D =
2. Per Unit Base = R
3. T
4. Surface Mounted
P
10
DM
JM
- 1
- T
Time (s)
t
1
A
S09-0131-Rev. C, 02-Feb-09
= P
t
2
Document Number: 72092
1
DM
Z
th J A
100
th J A
t
t
1
2
(t )
10
= 70 °C/W
100
600
600