FDS6680 Fairchild Semiconductor, FDS6680 Datasheet

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... Very fast switching. Low gate charge (typical nC). TM SO-8 SuperSOT - unless other wise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) April 1998 TM MOSFET = 0.010 @ DS(ON 0.015 @ V = 4.5 V. DS(ON) GS SOIC-16 SOT-223 FDS6680 30 ±20 11.5 50 2.5 1.2 1 -55 to 150 50 °C/W 25 °C/W FDS6680 Rev.E1 Units °C ...

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... C 0.04 in pad of 2oz copper. Min Typ Max 55° 100 -100 1 1 mV/ 0.0085 0.01 T =125°C 0.014 0.017 J 0.0125 0.015 50 40 2070 510 235 2.1 1.2 is guaranteed 125 C 0.006 in of 2oz copper. FDS6680 Rev.E1 Units V o mV/ C µA µ pad ...

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... Figure 6. Body Diode Forward Voltage = 3.5V 4.0 4.5 5.0 6 DRAIN CURRENT (A) D Drain Current and Gate Voltage 11. 125 ,GATE-SOURCE VOLTAGE (V) GS Gate-to-Source Voltage. = 125°C J 25°C -55°C 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD Variation with Source Current and Temperature. FDS6680 Rev. 1.2 ...

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... Figure 10. Single Pulse Maximum Power 0.01 0 TIME (sec iss C oss C rss MHz 0.2 0 DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R =See Note 25°C A 0.01 0 SINGLE PULSE TIME (SEC) Dissipation. R ( =See Note 1c JA P(pk ( Duty Cycle 100 300 20 30 100 300 FDS6680 Rev.E1 ...

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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ CoolFET™ CROSSVOLT™ CMOS FACT™ FACT Quiet Series™ ® FAST FASTr™ GTO™ ...