FDS6680 Fairchild Semiconductor, FDS6680 Datasheet - Page 2

• Manufacturer Part Number: FDS6680
• Description: MOSFET N-CH 30V 11.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6680

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 2070pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.01 Ohms
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6680TR

1. R
design while R
Notes:
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
Electrical Characteristics (
Symbol
OFF CHARACTERISTICS
BV
I
I
I
ON CHARACTERISTICS
V
R
I
g
DYNAMIC CHARACTERISTICS
C
C
C
SWITCHING CHARACTERISTICS
t
t
t
t
Q
Q
Q
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
V
DSS
GSSF
GSSR
D(ON)
D(on)
r
D(off)
f
S
Scale 1 : 1 on letter size paper
FS
BV
GS(th)
V
SD
DS(ON)
iss
oss
rss
JA
g
gs
gd
DSS
GS(th)
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
DSS
/ T
/ T
CA
J
J
is determined by the user's board design.
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Zero Gate Voltage Drain Current
Gate - Body Leakage, Forward
Gate - Body Leakage, Reverse
Gate Threshold Voltage
Gate Threshold Voltage Temp.Coefficient
Static Drain-Source On-Resistance
On-State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn - On Delay Time
Turn - On Rise Time
Turn - Off Delay Time
Turn - Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
(Note 2)
a. 50
of 2oz copper.
T
(Note 2)
A
O
C/W on a 1 in
= 25
O
C unless otherwise noted )
2
pad
Conditions
V
I
V
V
V
V
I
V
V
V
V
V
V
V
V
V
V
D
D
f = 1.0 MHz
GS
DS
GS
GS
DS
GS
GS
GS
DS
DS
DS
GS
DS
GS
GS
= 250 µA, Referenced to 25
= 250 µA, Referenced to 25
= 15 V, I
= 5 V
= 24 V, V
= V
= 15 V, I
= 15 V, V
= 15 V, I
= 0 V, I
= 20 V, V
= -20 V, V
= 10 V, I
= 4.5 V, I
= 10 V, V
= 10 V , R
= 0 V, I
GS
, I
b. 105
pad of 2oz copper.
D
S
D
D
D
D
D
= 2.1 A
= 250 µA
= 250 µA
D
GS
DS
DS
GS
O
= 11.5 A
= 1 A
= 11.5 A,
DS
= 11.5 A
GEN
C/W on a 0.04 in
= 9.5 A
= 0 V
= 0 V
= 5 V
= 0 V,
= 0 V
=
(Note 2)
T
T
2
J
J
= 55°C
=125°C
o
o
C
C
Min
30
50
1
0.0085
0.0125
0.014
2070
Typ
510
235
1.7
23
40
13
10
36
13
19
-5
7
6
c. 125
of 2oz copper.
O
C/W on a 0.006 in
0.017
0.015
-100
Max
0.01
100
2.1
1.2
10
21
18
58
23
27
1
3
JC
is guaranteed by
FDS6680 Rev.E1
mV/
mV/
Units
µA
µA
nA
nA
nC
nC
nC
ns
ns
ns
ns
2
V
V
A
S
pF
pF
pF
A
V
o
pad
C
o
C