FDS6680 Fairchild Semiconductor, FDS6680 Datasheet - Page 4

• Manufacturer Part Number: FDS6680
• Description: MOSFET N-CH 30V 11.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6680

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 2070pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.01 Ohms
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6680TR

Typical Electrical And Thermal Characteristics
0.01
100
Figure 7. Gate Charge Characteristics.
0.1
10
Figure 9. Maximum Safe Operating Area.
50
20
10
8
6
4
2
0
3
1
0.1
0
0.005
0.002
0.001
0.05
0.02
0.01
I
D
0.5
0.2
0.1
0.0001
1
R
= 11.5A
0.2
SINGLE PULSE
JA
V
T
D = 0.5
= See Note 1c
GS
A
= 25°C
10
= 10V
0.2
V
0.5
DS
0.1
Q
, DRAIN-SOURCE VOLTAGE (V)
g
0.05
, GATE CHARGE (nC)
0.02
1
0.001
Figure 11. Transient Thermal Response Curve.
0.01
20
Single Pulse
2
V
DS
= 10V
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
5
30
20V
0.01
10
15V
40
30
50
0.1
t , TIME (sec)
1
3000
2000
1000
500
200
100
50
40
30
20
10
0.001
0
Figure 8. Capacitance Characteristics.
0.1
Figure 10. Single Pulse Maximum Power
1
0.2
f = 1 MHz
V
GS
0.01
= 0V
V
DS
0.5
, DRAIN TO SOURCE VOLTAGE (V)
Dissipation.
SINGLE PULSE TIME (SEC)
0.1
P(pk)
10
1
T - T
R
Duty Cycle, D = t /t
J
R
JA
JA
t
1
A
2
(t) = r(t) * R
t
= P * R
1
=See Note 1c
2
R
JA
5
1
100
SINGLE PULSE
JA
10
(t)
JA
2
T = 25°C
=See Note 1c
A
10
C rss
C iss
C oss
300
FDS6680 Rev.E1
100
20 30
300