FDS6680 Fairchild Semiconductor, FDS6680 Datasheet - Page 3

• Manufacturer Part Number: FDS6680
• Description: MOSFET N-CH 30V 11.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDS6680

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 10 mOhm @ 11.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 5V
• Input Capacitance (ciss) @ Vds: 2070pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 11.5A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 10mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.7V
• Rohs Compliant: Yes
• Configuration: Single Quad Drain Triple Source
• Resistance Drain-source Rds (on): 0.01 Ohms
• Forward Transconductance Gfs (max / Min): 40 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 2.5 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDS6680TR

Typical Electrical Characteristics
50
40
30
20
10
50
40
30
20
10
Figure 3. On-Resistance Variation with
0
0
1.8
1.6
1.4
1.2
0.8
0.6
Figure 1. On-Region Characteristics.
0
0
V
1
-50
GS
5.0
V
DS
Figure 5. Transfer Characteristics.
6.0
= 10V
I = 11.5A
V
D
= 10V
GS
-25
=10V
0.5
1
Temperature.
V
V
GS
4.5
DS
T , JUNCTION TEMPERATURE (°C)
0
, GATE TO SOURCE VOLTAGE (V)
J
, DRAIN-SOURCE VOLTAGE (V)
4.0
1
25
2
50
3.5
1.5
3
T = -55°C
J
75
100
3.0
2
125°C
4
125
25°C
2.5
5
150
0.0001
0.001
2.5
1.5
0.5
0.01
3
2
1
Figure 2. On-Resistance Variation with
0.1
50
10
0.04
0.03
0.02
0.01
0
1
Figure 6. Body Diode Forward Voltage
0.2
Figure 4. On-Resistance Variation with
0
2
V
V
GS
GS
=0V
= 3.5V
10
V
SD
0.4
, BODY DIODE FORWARD VOLTAGE (V)
Drain Current and Gate Voltage.
Variation with Source Current
and Temperature.
Gate-to-Source Voltage.
V
4
T = 125°C
GS
I
J
T = 25 C
D
A
,GATE-SOURCE VOLTAGE (V)
, DRAIN CURRENT (A)
4.0
20
0.6
o
25°C
T = 125 C
A
4.5
6
-55°C
30
5.0
o
0.8
6.0
8
40
I = 11.5A
10
D
1
FDS6680 Rev.E1
10
50
1.2