FDS6673BZ Fairchild Semiconductor, FDS6673BZ Datasheet

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... Thermal Resistance , Junction to Ambient (Note 1a Thermal Resistance , Junction to Case (Note 1) JC Package Marking and Ordering Information Device Marking Device FDS6673BZ FDS6673BZ ©2009 Fairchild Semiconductor Corporation FDS6673BZ Rev. B2 ® MOSFET Features Max r DS(on) Max r DS(on) Extended V HBM ESD protection level of 6.5kV typical (note 3) in ...

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... Scale letter size paper 2: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%. 3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. FDS6673BZ Rev 25°C unless otherwise noted J Test Conditions ...

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... Temperature 80 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 150 2.0 2.5 3 GATE TO SOURCE VOLTAGE (V) GS Figure 5. Transfer Characteristics FDS6673BZ Rev 25°C unless otherwise noted J 4.0 3.8 3.6 3.4 3 -4V 3.0 GS 2.8 2.6 2.4 2.2 2.0 1.8 1.6 = -3.5V 1.4 1 ...

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... T = 150 0.1 0.01 1E-3 1E (V) GS Figure -4. AMBIENT TEMPERATURE A Figure 11. Maximum Continuous Drain Current vs Ambient Temperature FDS6673BZ Rev 25°C unless otherwise noted J 6000 V = -15V DD 1000 V = -20V DD 100 60 80 100 0.1 Figure Figure 10. GS 100 -10V GS 1 THIS AREA IS LIMITED BY r 0.1 ...

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... Figure 13. Single Pulse Maximum Power Dissipation 2 1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 1E-3 1E Figure 14. Junction-to-Ambient Transient Thermal Response Curve FDS6673BZ Rev °C unless otherwise noted PULSE WIDTH (sec) SINGLE PULSE 125 C RECTANGULAR PULSE DURATION (sec) ...

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... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDS6673BZ Rev. B2 ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ QS™ Green FPS™ e-Series™ ...