FDS6673BZ Fairchild Semiconductor, FDS6673BZ Datasheet - Page 4

• Manufacturer Part Number: FDS6673BZ
• Description: MOSFET P-CH 30V 14.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS6673BZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0078 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 14.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.0078Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±25V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: FDS6673BZ; Q3295237

FDS6673BZ Rev. B2
Typical Characteristics
Figure 11.
1000
1E-3
1E-4
0.01
100
0.1
10
16
12
Figure 7.
10
8
4
0
1
8
6
4
2
0
25
0
0
Maximum Continuous Drain Current vs
5
Ambient Temperature
T
50
A
Figure 9.
20
Gate Charge Characteristics
, AMBIENT TEMPERATURE
10
V
Q
V
T
DD
g
GS
J
, GATE CHARGE(nC)
= 150
= -10V
= -4.5V
75
40
15
-V
o
I
GS
g
C
(V)
vs V
20
100
60
T
T
V
GS
V
J
DD
J
GS
= 25
= 25°C unless otherwise noted
= -20V
25
= -10V
o
(
C
V
125
o
DD
C
80
)
= -15V
30
150
100
35
4
Figure 8.
Figure 12. Forward Bias Safe Operating Area
Figure 10.
0.01
1000
100
6000
0.1
100
10
10
40
1
0.01
1
10
0.1
-2
THIS AREA IS
LIMITED BY r
Capacitance vs Drain to Source Voltage
f = 1MHz
V
GS
T
= 0V
J
-V
-V
10
Unclamped Inductive Switching
= 125
0.1
DS
DS
-1
t
SINGLE PULSE
T
R
T
, DRAIN to SOURCE VOLTAGE (V)
AV
, DRAIN TO SOURCE VOLTAGE (V)
J
C
DS(on)
JA
o
= MAX RATED
= 25
, TIME IN AVALANCHE(ms)
C
Capability
= 125
o
C
10
o
1
C/W
1
0
C
rss
C
iss
10
T
1
10
C
J
oss
= 25
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o
C
10
1s
100 ms
1ms
10 ms
100 s
10s
DC
10
2
100
10
500
30
3