FDS6673BZ Fairchild Semiconductor, FDS6673BZ Datasheet - Page 3

• Manufacturer Part Number: FDS6673BZ
• Description: MOSFET P-CH 30V 14.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS6673BZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0078 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 14.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.0078Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±25V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: FDS6673BZ; Q3295237

FDS6673BZ Rev. B2
Typical Characteristics
Figure 3.
80
70
60
50
40
30
20
10
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
0
Figure 1. On Region Characteristics
2.0
-80
0
Figure 5. Transfer Characteristics
PULSE DURATION = 80 s
DUTY CYCLE = 0.5% MAX
Normalized On Resistance vs Junction
I
V
V
D
GS
DS
= -14.5A
-V
= -10V
= -6V
-40
T
T
-V
GS
J
J
2.5
,
DS
= 25
, GATE TO SOURCE VOLTAGE (V)
V
JUNCTION TEMPERATURE
GS
1
, DRAIN TO SOURCE VOLTAGE (V)
Temperature
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
V
o
= -4.5V
C
GS
V
0
GS
= -5V
3.0
= -10V
T
J
40
= 150
2
V
GS
3.5
o
T
= -3.5V
T
C
J
J
= -55
80
= 25°C unless otherwise noted
o
C
3
(
4.0
V
o
V
120
C
GS
GS
)
= -3V
= -4V
160
4.5
4
3
Figure 2.
Figure 4.
Figure 6.
1E-3
0.01
100
0.1
25
20
15
10
00
10
4.0
3.8
3.6
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
0
1
0.0
10
2
V
GS
-V
V
Normalized On-Resistance vs Drain
Current and Gate Voltage
GS
= 0V
0.2
On-Resistance vs Gate to Source
SD
20
T
Source to Drain Diode Forward
-V
= -3.5V
J
, BODY DIODE FORWARD VOLTAGE (V)
GS
= 150
Voltage vs Source Current
-I
D
,
I
4
, DRAIN CURRENT(A)
D
GATE TO SOURCE VOLTAGE (V)
0.4
30
= -7A PULSE DURATION = 80 s
o
C
Voltage
T
0.6
40
J
DUTY CYCLE = 0.5%MAX
PULSE DURATION = 80 s
DUTY CYCLE = 0.5%MAX
= 25
6
o
C
0.8
50
V
T
GS
J
T
T
= -55
J
J
= -4V
V
= 150
= 25
GS
www.fairchildsemi.com
1.0
60
o
C
= -10V
8
o
V
o
C
V
C
GS
GS
1.2
= -4.5V
70
= -5V
1.4
10
80