FDS6673BZ Fairchild Semiconductor, FDS6673BZ Datasheet - Page 2

• Manufacturer Part Number: FDS6673BZ
• Description: MOSFET P-CH 30V 14.5A 8-SOIC
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r
• Type: Power MOSFETr

Specifications of FDS6673BZ

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7.8 mOhm @ 14.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 14.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 124nC @ 10V
• Input Capacitance (ciss) @ Vds: 4700pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Single Quad Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.0078 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 60 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 14.5 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: P
• Channel Mode: Enhancement
• Drain-source On-res: 0.0078Ohm
• Drain-source On-volt: 30V
• Gate-source Voltage (max): ±25V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 8
• Package Type: SOIC N
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: FDS6673BZ; Q3295237

FDS6673BZ Rev. B2
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0%.
3: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
B
I
I
V
r
g
C
C
C
t
t
t
t
Q
Q
Q
Q
V
t
Q
DSS
GSS
DS(on)
d(on)
r
d(off)
f
rr
B
FS
VDSS
GS(th)
SD
iss
oss
rss
g
g
gs
gd
rr
V
drain pins. R
Symbol
VDSS
T
T
GS(th)
Scale 1 : 1 on letter size paper
JA
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
JC
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain Charge
Source to Drain Diode Forward Voltage V
Reverse Recovery Time
Reverse Recovery Charge
is guaranteed by design while R
(Note 2)
a) 50
Parameter
when mounted on a 1 in
pad of 2 oz copper
o
C/W (10 sec)
(Note 2)
CA
T
is determined by the user’s board design.
J
= 25°C unless otherwise noted
2
V
V
V
V
I
I
25°C
I
25°C
V
V
V
T
V
f = 1.0MHz
V
V
V
I
V
I
I
D
D
D
D
I
F
F
J
D
DS
GS
GS
GS
GS
GS
DS
DS
DD
GS
DS
DS
GS
= 14.5A, di/dt = 100A/ s
= 14.5A, di/dt = 100A/ s
= -250 A, V
= -250 A, referenced to
= -250 A, referenced to
= -14.5A
= 125
= -14.5A
2
= -24V, V
= -5V, I
= -15V, V
= -15V, V
= -15V, V
= 0V, I
= ±25V, V
= V
= -10V , I
= -4.5V, I
= -10V, I
= -15V, I
= -10V, R
Test Conditions
b) 105
on a .04 in
copper
DS
o
C
, I
S
o
D
C/W when mounted
= -2.1A
D
D
D
= -14.5A
D
D
GS
GS
GS
GS
GS
GS
DS
= -250 A
= -14.5A
= -1A
= -14.5A
= -12A
2
= 0V
pad of 2 oz
= 0V,
= -10V,
= -5V,
= 6
= 0V
= 0V
Min
-30
-1
c) 125
3500
14
16
23.5
Typ
600
600
-1.9
225
105
-0.7
-20
8.1
6.5
9.6
9.7
on a minimun pad
60
88
46
8
o
C/W when mounted
www.fairchildsemi.com
4700
Max
±10
800
900
-1.2
36
167
124
7.8
12
12
26
29
65
45
34
-1
-3
mV/°C
mV/°C
Units
m
nC
nC
nC
nC
nC
pF
pF
pF
ns
ns
V
V
S
V
A
A
ns
ns
ns