SI4378DY-T1-GE3 Vishay, SI4378DY-T1-GE3 Datasheet - Page 5

• Manufacturer Part Number: SI4378DY-T1-GE3
• Description: MOSFET N-CH 20V 19A 8-SOIC
• Manufacturer: Vishay

Specifications of SI4378DY-T1-GE3

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.7 mOhm @ 25A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 1.8V @ 250µA
• Gate Charge (qg) @ Vgs: 55nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 8500pF @ 10V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 25A
• Drain Source Voltage Vds: 20V
• On Resistance Rds(on): 4.2mohm
• Rds(on) Test Voltage Vgs: 12V
• Threshold Voltage Vgs Typ: 1.8V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SI4378DY-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72918.
Document Number: 72918
S09-0226-Rev. C, 09-Feb-09
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Duty Cycle = 0.5
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Single Pulse
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Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
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Vishay Siliconix
Si4378DY
www.vishay.com
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