SI4378DY-T1-E3 Vishay, SI4378DY-T1-E3 Datasheet

MOSFET N-CH 20V 19A 8-SOIC

SI4378DY-T1-E3

Manufacturer Part Number
SI4378DY-T1-E3
Description
MOSFET N-CH 20V 19A 8-SOIC
Manufacturer
Vishay
Series
TrenchFET®r
Datasheet

Specifications of SI4378DY-T1-E3

Transistor Polarity
N-Channel
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
2.7 mOhm @ 25A, 4.5V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
19A
Vgs(th) (max) @ Id
1.8V @ 250µA
Gate Charge (qg) @ Vgs
55nC @ 4.5V
Input Capacitance (ciss) @ Vds
8500pF @ 10V
Power - Max
1.6W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Minimum Operating Temperature
- 55 C
Configuration
Single Quad Drain Triple Source
Resistance Drain-source Rds (on)
0.0027 Ohm @ 4.5 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
19 A
Power Dissipation
1600 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
25A
Drain Source Voltage Vds
20V
On Resistance Rds(on)
2.7mohm
Rds(on) Test Voltage Vgs
4.5V
Threshold Voltage Vgs Typ
600mV
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SI4378DY-T1-E3TR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SI4378DY-T1-E3
Manufacturer:
Vishay/Siliconix
Quantity:
25 044
Part Number:
SI4378DY-T1-E3
Manufacturer:
VISHAY
Quantity:
7 856
Part Number:
SI4378DY-T1-E3
Manufacturer:
VISHAY
Quantity:
20 000
Company:
Part Number:
SI4378DY-T1-E3
Quantity:
70 000
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
Document Number: 72918
S09-0226-Rev. C, 09-Feb-09
Ordering Information: Si4378DY-T1-E3 (Lead (Pb)-free)
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS T
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T
Pulsed Drain Current (10 µs Pulse Width)
Continuous Source Current (Diode Conduction)
Avalanche Current
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
V
DS
20
(V)
G
S
S
S
0.0027 at V
0.0042 at V
1
2
3
4
Si4378DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
R
DS(on)
Top View
SO-8
J
a
= 150 °C)
a
GS
GS
(Ω)
= 4.5 V
= 2.5 V
N-Channel 20-V (D-S) MOSFET
8
7
6
5
a
D
D
D
D
a
A
I
= 25 °C, unless otherwise noted
D
25
22
(A)
Steady State
Steady State
L = 0.1 mH
T
T
T
T
A
A
A
A
t ≤ 10 s
= 25 °C
= 70 °C
= 25 °C
= 70 °C
FEATURES
APPLICATIONS
• Halogen-free According to IEC 61249-2-21
• Ultra Low On-Resistance Using High
• Q
• 100 % R
• Synchronous Rectification
• Point-Of-Load
Symbol
Symbol
T
Available
Density TrenchFET
Technology
R
R
J
V
V
I
I
P
, T
DM
thJA
thJF
I
I
AS
g
GS
DS
D
S
D
Optimized
stg
g
Tested
Typical
10 s
2.9
3.5
2.2
29
67
13
25
20
G
®
N-Channel MOSFET
- 55 to 150
Gen II Power MOSFET
± 12
20
70
40
Steady State
D
S
Maximum
1.3
1.6
35
80
16
Vishay Siliconix
19
13
1
Si4378DY
www.vishay.com
°C/W
Unit
Unit
°C
W
V
A
1

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SI4378DY-T1-E3 Summary of contents

Page 1

... SO Top View Ordering Information: Si4378DY-T1-E3 (Lead (Pb)-free) Si4378DY-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS T Parameter Drain-Source Voltage Gate-Source Voltage a Continuous Drain Current (T = 150 °C) J Pulsed Drain Current (10 µs Pulse Width) Continuous Source Current (Diode Conduction) Avalanche Current a Maximum Power Dissipation ...

Page 2

... Si4378DY Vishay Siliconix SPECIFICATIONS °C, unless otherwise noted J Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current a On-State Drain Current a Drain-Source On-State Resistance a Forward Transconductance a Diode Forward Voltage b Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge ...

Page 3

... Gate Charge 150 ° 0.00 0.2 0.4 0 Source-to-Drain Voltage (V) SD Source-Drain Diode Forward Voltage Document Number: 72918 S09-0226-Rev. C, 09-Feb- 2 °C J 0.8 1.0 1.2 Si4378DY Vishay Siliconix 10000 C iss 8000 6000 4000 C rss C 2000 oss Drain-to-Source Voltage (V) DS Capacitance 1.4 1.2 1 ...

Page 4

... Si4378DY Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0 250 µA D 0.2 0.0 - 0.2 - 0.4 - 0 Temperature (°C) J Threshold Voltage 2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0. www.vishay.com 4 75 100 125 150 100 Limited DS(on 0 °C C Single Pulse 0.01 ...

Page 5

... Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72918. Document Number: 72918 S09-0226-Rev. C, 09-Feb- Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Si4378DY Vishay Siliconix - www.vishay.com 10 5 ...

Page 6

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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