RUE003N02TL Rohm Semiconductor, RUE003N02TL Datasheet - Page 3

MOSFET N-CH 20V 300MA EMT3

RUE003N02TL

Manufacturer Part Number
RUE003N02TL
Description
MOSFET N-CH 20V 300MA EMT3
Manufacturer
Rohm Semiconductor
Datasheets

Specifications of RUE003N02TL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
1 Ohm @ 300mA, 4V
Drain To Source Voltage (vdss)
20V
Current - Continuous Drain (id) @ 25° C
300mA
Vgs(th) (max) @ Id
1V @ 1mA
Input Capacitance (ciss) @ Vds
25pF @ 10V
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
SC-75-3, SOT-416, EMT3, 3-SSMini
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
On Resistance Rds(on)
700mohm
Rds(on) Test Voltage Vgs
4V
Voltage Vgs Max
8V
Transistor Case Style
EMT
No. Of Pins
3
Svhc
No SVHC
Configuration
Single
Resistance Drain-source Rds (on)
1 Ohm @ 4 V
Drain-source Breakdown Voltage
20 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.3 A
Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
RUE003N02TLTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
RUE003N02TL
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistor
Fig.8 Switching time measurement circuit
Switching characteristics measurement circuit
1000
100
Fig.4 Static drain-source on-state
10
0.01
1
0.1
Fig.7 Switching characteristics
10
0.01
1
R
resistance vs. drain current (ΙΙΙ)
G
DRAIN CURRENT : I
Ta=125°C
DRAIN CURRENT : I
−25°C
V
75°C
25°C
GS
0.1
D.U.T.
0.1
I
D
D
(A)
D
t
t
t
t
d(off)
d(on)
f
Ta =25°C
V
V
R
Pulsed
r
(A)
DD
GS
G
V
Pulsed
=10Ω
GS
=10V
=4V
R
V
=1.8V
L
DD
1
V
DS
1
0.01
0.1
1
0.0
Fig.5 Source current vs.
SOURCE-DRAIN VOLTAGE : V
source-drain voltage
V
V
GS
DS
0.5
t
d (on)
Fig.9 Switching time waveforms
10%
t
50%
on
10%
t
r
1
Ta=125°C
Pulse width
−25°C
75°C
25°C
90%
V
Pulsed
SD
GS
(V)
=0V
1.5
90%
100
t
10
d (off)
1
0.01
Fig.6 Typical capacitance vs.
DRAIN-SOURCE VOLTAGE : V
t
off
t
f
50%
drain-source voltage
0.1
10%
90%
RUM003N02
Rev.B
1
C
10
rss
Ta =25°C
f=1MH
V
DS
GS
C
C
oss
(V)
=0V
iss
Z
3/3
100

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