BSN20,215 NXP Semiconductors, BSN20,215 Datasheet - Page 3

• Manufacturer Part Number: BSN20,215
• Description: MOSFET N-CH 50V 173MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSN20,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 173mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.173 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 15Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 173mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-1658-2; 934012500215; BSN20 T/R

Philips Semiconductors
9397 750 07213
Product specification
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
T
P
sp
der
= 25 C; I
function of solder point temperature.
P
(%)
=
der
----------------------
P
tot 25 C
120
100
P
80
60
40
20
tot
0
DM
0
is single pulse.
25
100%
10 -2
10 -1
(A)
I D
50
1
1
P
T sp = 25 o C
75
t p
100
T
125
=
T sp ( o C)
t p
T
t
150
03aa17
175
R DSon = V DS / I D
Rev. 03 — 26 June 2000
N-channel enhancement mode field-effect transistor
10
Fig 2. Normalized continuous drain current as a
D.C.
V
I
der
GS
function of solder point temperature.
=
I
der
5 V
------------------ -
I
120
100
(%)
D 25 C
80
60
40
20
0
I
D
0
25
100%
V DS (V)
50
t p = 10 s
100 s
1 ms
10 ms
100 ms
75
T sp ( o C)
03aa49
10 2
© Philips Electronics N.V. 2000. All rights reserved.
100
125
150
BSN20
03aa25
175
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