BSN20,215 NXP Semiconductors, BSN20,215 Datasheet - Page 7

• Manufacturer Part Number: BSN20,215
• Description: MOSFET N-CH 50V 173MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSN20,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 173mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.173 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 15Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 173mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-1658-2; 934012500215; BSN20 T/R

Philips Semiconductors
9397 750 07213
Product specification
Fig 9. Gate-source threshold voltage as a function of
Fig 11. Forward transconductance as a function of
I
T
D
j
= 25 C and 150 C; V
= 1 mA; V
V GS(th)
junction temperature.
drain current; typical values.
g fs
(S)
(V)
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
2
1
0
-60
DS
= V
-20
GS
DS
20
I
D
60
typ
min
R
DSon
100
T j ( o C)
140
03aa54
03aa38
180
Rev. 03 — 26 June 2000
N-channel enhancement mode field-effect transistor
Fig 10. Sub-threshold drain current as a function of
Fig 12. Input, output and reverse transfer capacitances
T
V
j
GS
= 25 C; V
C iss , C oss ,
gate-source voltage.
as a function of drain-source voltage; typical
values.
= 0 V; f = 1 MHz
C rss
(pF)
10 -1
10 -2
10 -3
10 -4
10 -5
10 -6
(A)
I D
10 2
10
0
1
10 -1
DS
0.2 0.4 0.6 0.8
= 5 V
min
1
1
© Philips Electronics N.V. 2000. All rights reserved.
typ
1.2 1.4 1.6 1.8
10
V GS (V)
V DS (V)
03aa89
BSN20
C oss
C rss
C iss
03aa56
2
10 2
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