BSN20,215 NXP Semiconductors, BSN20,215 Datasheet - Page 5

• Manufacturer Part Number: BSN20,215
• Description: MOSFET N-CH 50V 173MA SOT-23
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r
• Type: Power MOSFETr

Specifications of BSN20,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 15 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 173mA
• Vgs(th) (max) @ Id: 1V @ 1mA
• Input Capacitance (ciss) @ Vds: 25pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 15 Ohm @ 10 V
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.173 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 15Ohm
• Drain-source On-volt: 50V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 173mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Compliant
• Other names: 568-1658-2; 934012500215; BSN20 T/R

8. Characteristics
Table 5:
T
Philips Semiconductors
9397 750 07213
Product specification
Symbol
Static characteristics
V
V
I
I
R
Dynamic characteristics
g
C
C
C
t
t
Source-drain diode
V
t
Q
DSS
GSS
on
off
rr
j
fs
(BR)DSS
GS(th)
SD
DSon
iss
oss
rss
r
= 25 C unless otherwise specified
Characteristics
Parameter
drain-source breakdown
voltage
gate-source threshold voltage I
drain-source leakage current
gate-source leakage current
drain-source on-state
resistance
forward transconductance
input capacitance
output capacitance
reverse transfer capacitance
turn-on time
turn-off time
source-drain (diode forward)
voltage
reverse recovery time
recovered charge
Conditions
I
Figure 9
V
V
V
Figure 7
V
Figure 7
V
Figure 11
V
f = 1 MHz;
V
V
R
I
Figure 13
I
dI
V
D
D
S
S
DS
GS
GS
GS
DS
GS
DD
GS
GS
GS
S
T
T
T
T
T
T
T
T
T
T
= 10 A; V
= 1 mA; V
= 180 mA; V
= 180 mA;
/dt = 100 A/ s;
j
j
j
j
j
j
j
j
j
j
= 40 V; V
= 10 V; I
= 25 C
= 55 C
= 25 C
= 150 C
= 55 C
= 25 C
= 150 C
= 20 V; V
= 10 V; I
= 25 C
= 150 C
= 5 V; I
= 25 C
= 0 V; V
= 20 V; R
= 10 V; R
= 0 V; V
= 50
Rev. 03 — 26 June 2000
and
and
Figure 12
D
DS
DS
DS
D
D
GS
8
8
= 100 mA;
GS
D
G
= 100 mA;
= 100 mA;
GS
DS
= V
= 10 V;
= 25 V
= 180 ;
= 50 ;
= 0 V
= 0 V
= 0 V
= 0 V;
N-channel enhancement mode field-effect transistor
GS
;
Min
50
46
0.4
0.3
40
Typ
75
1
0.01
10
2.8
3.8
170
17
7
4
1.7
8
0.9
30
30
© Philips Electronics N.V. 2000. All rights reserved.
Max
3.5
1.0
10
100
15
28
20
25
15
8
8
15
1.5
BSN20
Unit
V
V
V
V
V
nA
mS
pF
pF
pF
ns
ns
V
ns
nC
5 of 13
A
A