BSH103,215 NXP Semiconductors, BSH103,215 Datasheet - Page 6

MOSFET N-CH 30V 0.85A SOT23

BSH103,215

Manufacturer Part Number
BSH103,215
Description
MOSFET N-CH 30V 0.85A SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSH103,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
400 mOhm @ 500mA, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
850mA
Vgs(th) (max) @ Id
400mV @ 1mA
Gate Charge (qg) @ Vgs
2.1nC @ 4.5V
Input Capacitance (ciss) @ Vds
83pF @ 24V
Power - Max
540mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.4 Ohm @ 4.5 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 8 V
Continuous Drain Current
0.85 A
Power Dissipation
500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
568-5013-2
934054713215
BSH103 T/R
BSH103 T/R
BSH103,215

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSH103,215
Manufacturer:
TI
Quantity:
12 900
Part Number:
BSH103,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
handbook, full pagewidth
Philips Semiconductors
1998 Feb 11
handbook, halfpage
V GS
(V)
N-channel enhancement mode
MOS transistor
V
(1) V
(2) V
Fig.6
5
4
3
2
1
0
DD
= 15 V; I
DS
GS.
.
Gate-source and drain-source voltages as
functions of total gate charge; typical values.
(1)
D
= 0.5 A; T
V in
amb
= 25 C.
Fig.5 Switching times test circuit with input and output waveforms.
V DD
(2)
R L
V out
Q G (pC)
MBK507
MAM274
16
14
12
10
8
6
4
2
0
V out
V in
V DS
(V)
0
0
6
handbook, halfpage
t d(on)
10 %
T
(1) V
(2) V
(3) V
(4) V
t on
amb
90 %
Fig.7
(A)
I D
= 25 C; t
90 %
t f
GS
GS
GS
GS
4
3
2
1
0
0
= 7.5 V.
= 5.5 V.
= 4.5 V.
= 3.5 V.
(1)(2) (3)(4)
10 %
Output characteristics; typical values.
p
= 300 s;
2
(5)
= 0.
4
t d(off)
t off
6
(5) V
(6) V
(7) V
(8) V
(9) V
t r
Product specification
GS
GS
GS
GS
GS
8
= 3 V.
= 2.5 V.
= 2 V.
= 1.5 V.
= 1 V.
V DS (V)
BSH103
MBK505
(6)
(7)
(8)
(9)
10

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