BSH103,215 NXP Semiconductors, BSH103,215 Datasheet - Page 9

• Manufacturer Part Number: BSH103,215
• Description: MOSFET N-CH 30V 0.85A SOT23
• Manufacturer: NXP Semiconductors

Specifications of BSH103,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 400 mOhm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 850mA
• Vgs(th) (max) @ Id: 400mV @ 1mA
• Gate Charge (qg) @ Vgs: 2.1nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 83pF @ 24V
• Power - Max: 540mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 8 V
• Continuous Drain Current: 0.85 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-5013-2; 934054713215; BSH103 T/R; BSH103 T/R; BSH103,215

Philips Semiconductors
PACKAGE OUTLINE
1998 Feb 11
Plastic surface mounted package; 3 leads
N-channel enhancement mode
MOS transistor
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT23
1.1
0.9
A
max.
A
0.1
1
1
0.48
0.38
b
p
IEC
e 1
0.15
0.09
c
D
e
3.0
2.8
D
b p
3
JEDEC
1.4
1.2
E
REFERENCES
0
2
1.9
e
w
0.95
B
M
e
1
scale
B
EIAJ
9
1
2.5
2.1
H
E
0.45
0.15
L
p
A
2 mm
A 1
0.55
0.45
Q
H E
0.2
E
v
detail X
PROJECTION
0.1
EUROPEAN
w
L p
A
Q
Product specification
c
X
v
ISSUE DATE
BSH103
M
97-02-28
A
SOT23