QS6U24TR Rohm Semiconductor, QS6U24TR Datasheet

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Transistor 4V Drive Pch+SBD MOS FET QS6U24 Structure Silicon P-channel MOS FET Schottky Barrier DIODE Features 1) The QS6U24 combines Pch MOS FET with a Schottky barrier diode in a TSMT6 package. 2) Low on-state resisternce with a fast switching. ...

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Transistor Electrical characteristics (Ta=25°C) < > MOSFET Parameter Symbol Gate-source leakage I GSS V Drain-source breakdown voltage (BR) DSS I Zero gate voltage drain current DSS V Gate threshold voltage GS (th) Static drain-source on-starte R DS (on) resistance Forward ...

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Transistor Electrical characteristic curves 10 =−10V V DS Pulsed 1 Ta=125°C Ta=75°C Ta=25°C Ta=−25°C 0.1 0.01 0.001 1 1.5 2 2.5 3 3.5 4 4.5 5 GATE-SOURCE VOLTAGE : −V (V) GS Fig.1 Typical Transfer Characteristics 10000 =− ...

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Transistor 8 Ta=25°C V =−15V =−1. =10Ω G Pulsed 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 TOTAL GATE CHARGE : Qg (nC) Fig.10 Dynamic ...

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Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...